cha6005 - 99f ref. : dscha60052244 - 31 aug 12 1 / 10 specifications subject to change without notice united monolithic semiconductors s.a.s. bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 8 - 12ghz high power amplifier gaas monolithic microwave ic description the cha6005 - 99f is a high power amplifier monolithic circuit, which integrate s two stages and produces 32.5dbm output power associated to a high power added efficiency of 38% . it is designed for a wide range of applications, from military to commercial communication systems. the circuit is manufactured with a phemt process, 0.25m gate length, v ia holes through the substrate, air bridges and electron beam gate lithography. it is available in chip form . main features main electrical characteristics tamb. = + 25c symbol parameter min typ max unit freq frequency range 8 12 ghz g linear gain 2 2 db p1db output power @ 3 db comp. 3 1 .5 db m pae power added efficiency @ 3 db comp. 38 % 200 250 300 350 400 450 500 550 600 18 20 22 24 26 28 30 32 34 8 8.5 9 9.5 10 10.5 11 11.5 12 idrain @ ~ 3dbcomp (ma) linear gain (db) & pout @ ~ 3dbcomp freq (ghz) linear gain (db) pout @ pin=14 dbm (3dbcomp) idrain @ pin=14 dbm (3dbcomp)
cha6005 - 99f 8 - 12ghz high power amplifier ref. : dscha60052244 - 31 aug 12 2 / 10 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 electrical characteristics tamb. = + 25c , vd = + 8 v symbol parameter min typ max unit f req operating frequency 8 12 ghz g small signal gain 2 2 db dbs11 input return loss 13 db dbs22 output return loss 10 db p 1db output power @ 1dbcomp 31.5 dbm p 3db output power @ 3dbcomp 32.5 dbm pae power added efficiency @ 3dbcomp 3 9 % id_3dbc supply drain current @ 3dbcomp 500 ma vd1, 2 drain supply voltage 8 v id supply quiescent current 350 ma vg gate supply voltage - 1 v these values are representative of on - wafer measurements that are made without bonding wires at the rf ports. a bonding wire of typically 0.25 to 0.3nh will improve the matching at the accesses.
8 - 12ghz high power amplifier cha6005 - 99f ref. : dscha60052244 - 31 aug 12 3 / 10 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - franc e tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 absolute maximum ratings (1) tamb.= + 25c symbol parameter values unit vd drain bias voltage 9.0 v id drain bias current 550 ma vg gate bias voltage - 0.6 v pin maximum peak input power overdrive (2) +20 dbm tj junction temperature 175 c ta operating temperature range - 40 to +85 c tstg storage temperature range - 55 to +150 c (1) operation of this device above anyone of these parameters may cause permanent damage. (2) duration < 1s. typical bias conditions tamb.= +25c symbol pad n o parameter values unit v1 v1 drain supply voltage 8 v v2 v2 gaye supply voltage - 1 v
cha6005 - 99f 8 - 12ghz high power amplifier ref. : dscha60052244 - 31 aug 12 4 / 10 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical on - wafer sij parameters tamb.= +25c , vd = +8 v, id = 350 ma freq (ghz) s11 (db) phs11 () s12 (db) phs12 () s21 (db) phs21 () s22 (db) phs22 () 1.0 - 0.13 - 24.56 - 41.65 94.28 - 41.00 5.33 - 0.14 - 31.59 1.5 - 0.41 - 36.99 - 73.73 - 169.07 - 33.87 124.41 - 0.25 - 46.43 2.0 - 0.91 - 49.02 - 69.95 74.68 - 23.74 83.31 - 0.36 - 60.62 2.5 - 1.58 - 59.45 - 63.20 3.88 - 18.60 78.66 - 0.45 - 76.49 3.0 - 2.38 - 68.02 - 56.66 157.15 - 10.90 48.69 - 0.33 - 92.84 3.5 - 2.84 - 74.73 - 63.04 94.69 - 6.27 4.33 - 0.30 - 108.37 4.0 - 3.31 - 82.38 - 57.85 - 114.80 - 3.73 - 33.50 - 0.46 - 125.86 4.5 - 3.93 - 90.68 - 60.34 158.64 - 1.35 - 66.01 - 0.48 - 144.00 5.0 - 4.31 - 97.82 - 60.03 24.56 1.15 - 94.43 - 1.12 - 163.74 5.5 - 4.83 - 106.35 - 50.57 - 80.01 4.11 - 123.24 - 1.84 175.57 6.0 - 5.46 - 116.08 - 70.50 131.94 7.63 - 154.66 - 2.81 149.75 6.5 - 6.62 - 124.18 - 55.54 - 157.24 11.36 170.68 - 4.14 117.44 7.0 - 8.19 - 132.30 - 53.46 - 7.29 15.47 129.40 - 6.12 71.13 7.5 - 9.90 - 137.14 - 55.00 - 29.83 19.90 79.16 - 7.72 6.74 8.0 - 11.75 - 139.76 - 57.16 - 149.65 22.91 14.32 - 8.43 - 68.64 8.5 - 14.25 - 147.90 - 51.44 49.02 23.09 - 50.26 - 10.58 - 110.20 9.0 - 22.50 - 149.89 - 61.08 68.48 22.44 - 104.62 - 12.35 - 122.40 9.5 - 19.68 - 36.57 - 61.46 37.28 22.18 - 154.83 - 11.34 - 131.10 10.0 - 11.97 - 46.88 - 49.78 - 37.51 22.25 154.10 - 10.95 - 144.80 10.5 - 9.48 - 66.85 - 54.09 43.84 22.31 99.85 - 11.30 - 158.95 11.0 - 9.03 - 76.06 - 45.08 - 123.49 22.21 43.81 - 12.08 - 174.53 11.5 - 8.28 - 75.50 - 45.12 - 167.53 22.20 - 18.84 - 14.05 168.12 12.0 - 7.24 - 77.36 - 46.53 178.36 21.59 - 93.01 - 19.54 110.78 12.5 - 6.28 - 73.12 - 50.56 143.28 17.68 - 177.82 - 16.12 - 41.18 13.0 - 4.14 - 77.38 - 45.11 - 73.10 10.97 108.88 - 11.80 - 75.70 13.5 - 2.77 - 86.29 - 40.75 - 41.28 3.20 49.97 - 10.40 - 90.23 14.0 - 2.03 - 97.24 - 43.07 39.37 - 4.83 - 0.77 - 8.93 - 101.41 14.5 - 1.55 - 108.80 - 46.25 - 168.74 - 12.75 - 42.90 - 7.39 - 116.10 15.0 - 1.57 - 118.06 - 61.73 - 65.61 - 20.85 - 80.03 - 6.32 - 123.79 15.5 - 1.81 - 127.31 - 40.65 56.06 - 28.30 - 106.29 - 5.11 - 131.17 16.0 - 1.92 - 138.32 - 51.69 - 38.56 - 36.54 - 126.10 - 4.24 - 145.42 16.5 - 2.40 - 143.30 - 37.13 17.09 - 40.98 170.77 - 5.04 - 150.20 17.0 - 1.78 - 155.35 - 53.00 - 31.01 - 52.02 96.09 - 3.40 - 156.88 17.5 - 2.71 - 171.55 - 30.56 - 18.51 - 34.16 104.30 - 2.95 - 165.99 18.0 - 4.54 169.63 - 37.57 - 134.74 - 41.04 - 142.48 - 3.18 - 173.70
8 - 12ghz high power amplifier cha6005 - 99f ref. : dscha60052244 - 31 aug 12 5 / 10 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - franc e tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical on test fixture measurements tamb.= +25c, vd = 8v, id (quiescent) = 350ma, drain pulse width = 25s, duty cycle = 10% linear gain versus f requency output power @ 1&3dbcomp versus f requency 15 17 19 21 23 25 8 8.5 9 9.5 10 10.5 11 11.5 12 linear gain (db) freq (ghz) 28 29 30 31 32 33 34 35 36 8 8.5 9 9.5 10 10.5 11 11.5 12 pout @ ~ 1 & 3dbcomp freq (ghz) pout @ pin=11 dbm (1dbcomp) pout @ pin=14 dbm (3dbcomp)
cha6005 - 99f 8 - 12ghz high power amplifier ref. : dscha60052244 - 31 aug 12 6 / 10 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical test fixture measurements tamb.= +25c, vd = 8v, id (quiescent) = 350ma, drain pulse width = 25s, duty cycle = 10% power added efficiency @ 1 & 3dbcomp versus f requency drain current @ 1 & 3dbcomp versus f requency 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 8 8.5 9 9.5 10 10.5 11 11.5 12 pae (%) @ ~ 1 & 3dbcomp freq (ghz) pae (%) @ pin=11 dbm (1dbcomp) pae (%) @ pin=14 dbm (3dbcomp) 0 100 200 300 400 500 600 700 800 8 8.5 9 9.5 10 10.5 11 11.5 12 idrain (ma) @ ~ 1 & 3dbcomp freq (ghz) idrain @ pin=14 dbm (3dbcomp) idrain @ pin=11 dbm (1dbcomp)
8 - 12ghz high power amplifier cha6005 - 99f ref. : dscha60052244 - 31 aug 12 7 / 10 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - franc e tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 mechanical data chip thickness: 7 0m 10m . chip size : 3000 x 1500 35m all dimensions are in micrometers rf pads (1, 10 ) = 122 x 100m2 dc pads (4, 6, 7, 8, 9) = 100 x 100m2 pin number pin name description 1 in input rf 2, 3, 5 ,8 - n ot c onnected 4 vg1 vg1 6 vd1 vd1 7 vg2 n ot c onnected 8 gnd n ot c onnected 9 vd2 vd2 10 out output rf
cha6005 - 99f 8 - 12ghz high power amplifier ref. : dscha60052244 - 31 aug 12 8 / 10 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 recommended assembly plan 25m wedge bonding is preferred note: equivalent rf wire bonding: 0.25nh (typical length of 200m for a 25m diameter wire). recommended circuit bonding table port connection external capacitor in inductance (lbonding) = 0.3nh 400m length with a wire diameter of 25 m out inductance (lbonding) = 0.3nh 400m length with a wire diameter of 25 m v g inductance ? 1nh c1 ~ 120pf, c2 ~ 10nf v d inductance ? 1nh c1 ~ 120pf
8 - 12ghz high power amplifier cha6005 - 99f ref. : dscha60052244 - 31 aug 12 9 / 10 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - franc e tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 dc schematic medium power amplifier: 8v, 350ma
cha6005 - 99f 8 - 12ghz high power amplifier ref. : dscha60052244 - 31 aug 12 10 / 10 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 recommended esd management refer to the application note an0020 available at http://www.ums - gaas.com for esd sensitivity and handling recommendations for the ums products. recommended environmental management ums products are compliant with the regulation in particular with the directives rohs n2011/65 and reach n1907/2006. more environmental data are available in the application note an0019 also available at http://www.ums - gaas.com . ordering information chip form : cha6005 - 99f /00 information furnished is believed to be accurate and reliable. however united monolithic semiconductors s.a.s. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of united monolithic semiconductors s.a.s. . specifications mentioned in thi s publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. united monolithic semiconductors s.a.s. products are not authorised for use as critical components in life support devices or systems without express written approval from united monolithic semiconductors s.a.s.
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